feb.1999 mitsubishi semiconductor triac ? BCR08AS-8 low power use non-insulated type, planar passivation type ?i t (rms) ..................................................................... 0.8a ?v drm ....................................................................... 400v ?i fgt ! , i rgt ! , i rgt # ............................................. 5ma ?i fgt # ..................................................................... 10ma BCR08AS-8 application hybrid ic, solid state relay, control of household equipment such as electric fan washing machine, other general purpose control applications symbol i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg parameter rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight conditions commercial frequency, sine full wave 360 conduction, t a =40 c ] 4 60hz sinewave 1 full cycle, peak value, non-repetitive value corresponding to 1 cycle of half wave 60hz, surge on-state current typical value unit a a a 2 s w w v a c c mg ratings 0.8 8 0.26 1 0.1 6 1 C40 ~ +125 C40 ~ +125 48 symbol v drm v dsm parameter repetitive peak off-state voltage ] 1 non-repetitive peak off-state voltage ] 1 voltage class 8 (marked b?) 400 500 unit v v maximum ratings ] 1. gate open. 2 1 3 1
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3 t 1 terminal t 2 terminal gate terminal 4.4?.1 1.5?.1 1.6?.2 0.4?.07 0.8 min 2.5?.1 3.9?.3 0.4 +0.03 ?.05 1 2 3 (back side) outline drawing dimensions in mm sot-89 0.5?.07 1.5?.1 1.5?.1
feb.1999 symbol i drm v tm v fgt ! v rgt ! v rgt # v fgt # i fgt ! i rgt ! i rgt # i fgt # v gd r th (j-a) (dv/dt) c test conditions t j =125 c, v drm applied t c =25 c, i tm =1.2a, instantaneous measurement t j =25 c, v d =6v, r l =6 w , r g =330 w t j =25 c, v d =6v, r l =6 w , r g =330 w t j =125 c, v d =1/2v drm junction to case ] 4 unit ma v v v v v ma ma ma ma v c/w v/ m s typ. ! @ # $ ! @ # $ ] 2. measurement using the gate trigger characteristics measurement circuit. ] 3. the critical-rate of rise of the off-state commutating voltage is shown in the table below. ] 4. mounted on 25mm 25mm t0.7mm ceramic plate with solder. test conditions voltage class 8 v drm (v) 400 unit v/ m s commutating voltage and current waveforms (inductive load) (dv/dt) c min. 2 mitsubishi semiconductor triac ? BCR08AS-8 low power use non-insulated type, planar passivation type electrical characteristics parameter repetitive peak off-state current on-state voltage gate trigger voltage ] 2 gate trigger current ] 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c =C0.4a/ms 3. peak off-state voltage v d =400v limits min. 0.1 ] 3 max. 1.0 2.0 2.0 2.0 2.0 2.0 5 5 5 10 65 10 ? 10 1 7 5 3 2 012 10 0 7 5 3 2 345 4 4 t j = 125? t j = 25? 10 0 23 5710 1 4 2 23 5710 2 44 6 8 10 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c performance curves
feb.1999 10 0 23 10 0 5710 1 23 5710 2 23 5710 3 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? v gm = 10v v gt p gm = 1w p g(av) = 0.1w i gm = 1a v gd = 0.2v i fgt iii i fgt i , i rgt i , i rgt iii maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) allowable case temperature vs. rms on-state current case temperature (?) rms on-state current (a) maximum transient thermal impedance characteristics transient thermal impedance (?/ w) conduction time (cycles at 60hz) gate characteristics gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (?) 100 (%) gate trigger current (t j = t?) gate trigger current (t j = 25?) gate trigger voltage vs. junction temperature junction temperature (?) 100 (%) gate trigger voltage ( t j = t c ) gate trigger voltage ( t j = 25 ? ) 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 v rgt i v rgt iii v fgt i v fgt iii typical example 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 3 2 60 100 140 4 4 ?0 0 40 80 120 i fgt i i rgt iii i rgt i i fgt iii typical example 2.0 1.6 1.2 0.8 0.4 0 2.0 0 0.4 0.8 1.2 1.6 360 conduction resistive, inductive loads 160 120 100 60 20 0 1.6 0 0.2 0.6 1.0 1.4 40 80 140 0.4 0.8 1.2 resistive, inductive loads curves apply regardless of conduction angle natural convection 10 1 23 10 ? 5710 0 23 5710 1 23 5710 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 23 10 2 5710 3 23 5710 4 23 5710 5 junction to ambient junction to case mitsubishi semiconductor triac ? BCR08AS-8 low power use non-insulated type, planar passivation type
feb.1999 mitsubishi semiconductor triac ? BCR08AS-8 low power use non-insulated type, planar passivation type laching current vs. junction temperature laching current (ma) junction temperature (?) holding current vs. junction temperature holding current (ma) junction temperature (?) repetitive peak off-state current vs. junction temperature junction temperature (?) breakover voltage vs. junction temperature junction temperature (?) 100 (%) breakover voltage ( t j = t c ) breakover voltage ( t j = 25 ? ) commutation characteristics critical rate of rise of off-state commutating voltage (v/?) rate of decay of on-state commutating current (a /ms) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/?) 100 (%) breakover voltage ( dv/dt = xv/? ) breakover voltage ( dv/dt = 1v/? ) 160 100 80 40 20 0 140 40 ?0 ?0 ?0 0 20 60 80 140 100120 60 120 typical example 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 typical example 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? typical example distribution 23 10 0 5710 1 23 5710 2 23 5710 3 120 0 20 40 60 80 100 140 160 t j = 125?c typical example i quadrant iii quadrant 160 e40 0 40 80 120 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 e1 t 2 + , g e typical example typical example distribution t 2 + , g + t 2 e , g e t 2 e , g + ? y ? t 10 0 23 10 ? 5710 0 23 5710 1 23 5710 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? typical example t j = 125? i t = 1a t = 500? v d = 200v f = 3hz v d t (dv/dt) c t i quadrant iii quadrant minimum charac- teristics value voltage waveform current waveform i t t (di/dt) c 100 (%) repetitive peak off-state current ( t j = t c ) repetitive peak off-state current ( t j = 25 ? )
feb.1999 gate trigger current vs. gate current pulse width gate current pulse width (?) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) 10 1 10 3 7 5 3 2 10 0 23 5710 1 10 2 7 5 3 2 23 5710 2 4 4 44 i rgt i i rgt iii i fgt i i fgt iii typical example mitsubishi semiconductor triac ? BCR08AS-8 low power use non-insulated type, planar passivation type 6 w 6 w 6 w 6 w 6v 6v 6v 6v r g r g r g r g a v a v a v a v test procedure 1 test procedure 3 test procedure 2 test procedure 4 gate trigger characteristics test circuits
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